The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1994
Filed:
Jun. 07, 1993
Yi-Hen Wei, Saratoga, CA (US);
VLSI Technology, Inc., San Jose, CA (US);
Abstract
The present invention provides a BiCMOS integrated circuit with bipolar, NMOS and PMOS transistors. In a bipolar transistor, an emitter buffer is provided to minimize a hot carrier effect. The emitter buffer is implanted using the same mask used for a base link. However, the n-type dopant is implant using a large angle, while the p-type dopant is implanted using a normal implant. A 'base' oxide is grown over the implant region. This oxide ultimate isolates the emitter buffer from the polysilicon emitter contact section. Local interconnects are formed using a 'dual-gate' technique, in which a tungsten silicide cap layer is formed over polysilicon to short pn junctions in the interconnect.