The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 1996
Filed:
Aug. 24, 1994
Applicant:
Inventors:
Kuang-Yeh Chang, Los Gatos, CA (US);
Yi-Hen Wei, Saratoga, CA (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257370 ; 257377 ; 257 51 ; 257506 ; 257518 ; 257519 ; 257588 ; 257592 ; 437 31 ; 437 34 ; 437 57 ; 437 63 ; 437186 ; 437233 ;
Abstract
A method of fabricating BiCMOS devices, and the resultant BiCMOS device, are disclosed. According to the present invention, over-etching to the substrate on the deposited polysilicon emitter is prevented by providing additional oxide beneath a polysilicon layer as an etch stop. Despite inclusion of an oxide to define an end-point during patterning of an emitter, fabrication complexity is reduced by avoiding additional SAT masking and oxidation steps.