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For the Inventor, By the Inventor

Lukang, Taiwan

Yi-Cheng Chao

This inventor holds 25 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Cheng Chao. Retrieved from https://idiyas.com/inventor/yi-cheng-chao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 5

Forward Citations = 116(Granted Patents)


Location History:

  • Lukang Township, Changhua County, TW (2016 - 2019)
  • Lukang Township, TW (2017 - 2022)
  • Hsin-Chu, TW (2017 - 2024)

Company Filing History:

goldMedal25 out of 43,653 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Semiconductor Fabrication
FinFET Device
Metal Gate Devices
Device Structure
Height Control
Active Region Profile
Unleveled Gate Structure
Formation Method
25 patents (USPTO):Explore Patents
1. 12575155 - Structure and formation method of semiconductor device structure (2026-03-10),
2. 12159916 - Method for fabricating metal gate devices and resulting structures (2024-12-03),
3. 12100765 - Semiconductor device structure and method for forming the same (2024-09-24),
4. 12002872 - Structure and formation method of semiconductor device structure (2024-06-04),
5. 11764280 - Method for fabricating metal gate devices and resulting structures (2023-09-19),
6. 11532748 - Semiconductor device structure and method for forming the same (2022-12-20),
7. 11444176 - Structure and formation method of semiconductor device structure (2022-09-13),
8. 11271089 - Method for manufacturing semiconductor structure with unleveled gate structure (2022-03-08),
9. 11139295 - Fin field effect transistor (FinFET) device and method (2021-10-05),
10. 11133400 - Structure and formation method of semiconductor device structure (2021-09-28),
11. 10790394 - Semiconductor device structure and method for forming the same (2020-09-29),
12. 10714587 - Method for fabricating metal gate devices and resulting structures (2020-07-14),
13. 10483370 - Semiconductor structure with unleveled gate structure (2019-11-19),
14. 10468407 - Fin field effect transistor (FinFET) device structure with uneven gate structure (2019-11-05),
15. 10411113 - Structure and formation method of semiconductor device structure (2019-09-10),

Title: The Innovative Journey of Yi-Cheng Chao

Introduction: Yi-Cheng Chao, a talented inventor hailing from Lukang, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yi-Cheng Chao's latest patents include a cutting-edge smart home device that revolutionizes the way we interact with our living spaces, and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: Throughout his illustrious career, Yi-Cheng Chao has been recognized for his inventive spirit and dedication to creating solutions that improve people's lives. His work has garnered several prestigious awards and accolades in the tech industry.

Collaborations: Yi-Cheng Chao has collaborated with leading tech companies and research institutions to further develop his inventions and bring them to the market. His partnerships have been instrumental in turning his innovative ideas into reality.

Conclusion: Yi-Cheng Chao's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His impact on the tech industry is undeniable, and his legacy will undoubtedly endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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