Tokyo, Japan

Yen-Tien Lu

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yen-Tien Lu. Retrieved from https://idiyas.com/inventor/yen-tien-lu-0a7lekro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yen-Tien Lu and Semiconductor Etch-Profile Innovation.

Introduction

Yen-Tien Lu is an inventor associated with Tokyo Electron Limited in Tokyo, Japan. His patent work addresses semiconductor manufacturing, particularly methods for improving the etch profile of underlying layers.

Latest Patents

Lu is associated with 1 patent: “Methods and Structures for Improving Etch Profile of Underlying Layers.” The patent describes semiconductor devices and manufacturing methods that use a patterned, two-layer hardmask structure. The process forms and patterns a second hardmask layer, transfers the pattern to a first hardmask layer, removes the second layer, and trims the first layer’s upper portion. A silicon-containing layer is then formed on the pattern, and both that layer and the patterned first hardmask serve as masks during substrate etching.

Career Highlights

Lu’s disclosed invention focuses on controlling the mask structure used in substrate etching. By combining a trimmed hardmask pattern with a silicon-containing layer, the method is designed to improve the etch profile of underlying layers.

Collaborations

Lu’s listed coworker is Shihsheng Chang, a woman. Both are associated with Tokyo Electron Limited.

Conclusion

Yen-Tien Lu’s patent reflects work on hardmask patterning and etch-profile control for semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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