The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Aug. 18, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yen-Tien Lu, Tokyo, JP;

Shihsheng Chang, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 76/40 (2026.01); H10P 50/00 (2026.01);
U.S. Cl.
CPC ...
H10P 76/4085 (2026.01); H10P 50/73 (2026.01); H10P 76/405 (2026.01);
Abstract

Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first hardmask layer over a substrate, forming a second hardmask layer over the first hardmask layer, etching the second hardmask layer to form a pattern in the second hardmask layer, transferring the pattern to the first hardmask layer, removing the second hardmask layer and trimming an upper portion of the pattern in the first hardmask layer, forming a silicon-containing layer on a top surface of the pattern in the first hardmask layer, and etching the substrate with the pattern in the first hardmask layer and the silicon-containing layer both serving as a mask.


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