Company Filing History:
Years Active: 2013-2020
Title: Yen-Hsueh Huang: Innovator in SRAM Technology
Introduction
Yen-Hsueh Huang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of static random access memory (SRAM) devices. With a total of 2 patents, Huang's work has advanced the efficiency and functionality of memory systems.
Latest Patents
Huang's latest patents include a "Static random access memory device with keeper circuit" and a "Hidden refresh method and operating method for pseudo SRAM." The first patent describes an SRAM device that incorporates a memory cell and a keeper circuit. This innovative design allows the memory cell to be coupled to both a first and a second bit line, enhancing the device's performance. The keeper circuit is specifically designed to charge the second bit line when the first bit line is at a lower voltage level, and vice versa, ensuring optimal operation.
The second patent outlines a hidden refresh method for pseudo SRAM. This method involves receiving a system clock signal and adapting its duty-on period for data access operations, such as reading or writing. A refresh clock signal is generated, which does not overlap with the system clock's duty-on period. This innovative approach allows for efficient refresh operations, triggered by a control pulse that activates a word line.
Career Highlights
Yen-Hsueh Huang is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern computing.
Collaborations
Huang collaborates with talented colleagues, including Shih-Chin Lin and Pei-Geng Ma. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.
Conclusion
Yen-Hsueh Huang's contributions to SRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to enhancing memory device performance, making him a key figure in this field.