The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Jun. 28, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Wei Tsai, Hsinchu, TW;
Tsan-Tang Chen, Miaoli County, TW;
Chung-Cheng Tsai, Taichung, TW;
Yen-Hsueh Huang, Taipei, TW;
Chang-Ting Lo, New Taipei, TW;
Chun-Yen Tseng, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An SRAM device includes a memory cell and a keeper circuit. The memory cell is formed in an active area and coupled to a first bit line and a second bit line. The keeper circuit is formed in the active area and configured to charge the second bit line when the first bit line is at a first voltage level and the second bit line is at a second voltage level or charge the first bit line when the second bit line is at the first voltage level and the first bit line is at the second voltage level, wherein the second voltage level is higher than the first voltage level.