Company Filing History:
Years Active: 1995-2001
Title: Yau-Kae Shell: Innovator in Field Effect Transistor Technology
Introduction
Yau-Kae Shell is a prominent inventor based in Hsin-Chu, Taiwan. She has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors (FETs). With a total of 2 patents, her work has advanced the performance and efficiency of electronic devices.
Latest Patents
Yau-Kae Shell's latest patents focus on innovative structures and methods for fabricating field effect transistors. One of her notable patents is titled "Structure and method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel." This invention improves the drain to source punchthrough properties of FETs by utilizing selective deposition of silicon oxide through a Liquid Phase Deposition (LPD) method. The resulting self-aligning implant mask allows for the implantation of a buried anti-punchthrough channel, which reduces the depletion width at the substrate to source/drain junction under the gate electrode. This advancement enhances punch-through characteristics while maintaining device performance.
Another patent by Yau-Kae Shell also addresses the fabrication of field effect transistors with similar improvements in punchthrough properties. The method described in this patent mirrors the innovative techniques used in her first patent, showcasing her expertise in this area.
Career Highlights
Yau-Kae Shell is currently employed at United Microelectronics Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing advanced FET structures that are crucial for modern electronic applications.
Collaborations
Yau-Kae Shell collaborates with various professionals in her field, including her coworker Gary Y Hong. Their combined expertise contributes to the innovative projects at United Microelectronics Corporation.
Conclusion
Yau-Kae Shell is a key figure in the advancement of field effect transistor technology. Her patents reflect her commitment to improving electronic device performance through innovative fabrication methods. Her contributions continue to shape the future of semiconductor technology.