The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1995
Filed:
Sep. 30, 1994
Yau-Kae Shell, Hsinchu, TW;
Gary Hong, Hsinchu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A structure and method for fabricating a field effect transistor (FET) having improved drain to source punchthrough properties was achieved. The method utilizes the selective deposition of silicon oxide by a Liquid Phase Deposition (LPD) method to form a self-aligning implant mask. The mask is then used to implant a buried anti-punchthrough implant channel under and aligned to the gate electrode of the FET. The buried implant reduces the depletion width at the substrate to source and drain junction under the gate electrode but does not increase substantially the junction capacitance under the source and drain contacts, thereby improving punch-through characteristic while maintaining device performance.