Folsom, CA, United States of America

Yasuko Hattori

USPTO Granted Patents = 8 

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2019-2022

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8 patents (USPTO):Explore Patents

Title: Yasuko Hattori: Innovator in Memory Device Technology

Introduction

Yasuko Hattori is a prominent inventor based in Folsom, California, known for her significant contributions to memory device technology. With a total of eight patents to her name, she has made remarkable advancements in the field of ferroelectric memory cells.

Latest Patents

Among her latest patents, one focuses on techniques and devices for canceling memory cell variations. This innovative memory device includes a digit line and a ferroelectric memory cell, along with a first capacitor that is coupled with the digit line through two distinct paths. A switching component is strategically positioned in the second path to selectively couple the second node of the first capacitor with the digit line. Another notable patent addresses memory cell sensing stress mitigation. This invention describes methods and systems that allow a memory device to bias a memory cell to different voltages during access operations, effectively leveling wear experienced by the memory cell.

Career Highlights

Yasuko Hattori is currently employed at Micron Technology Incorporated, where she continues to push the boundaries of memory technology. Her work has been instrumental in developing advanced memory solutions that enhance performance and reliability.

Collaborations

Yasuko has collaborated with notable colleagues, including Mahdi Jamali and Daniele Vimercati, contributing to a dynamic and innovative work environment.

Conclusion

Yasuko Hattori's contributions to memory device technology exemplify her dedication to innovation and excellence. Her patents reflect a deep understanding of the complexities involved in memory cell design and operation.

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