The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Aug. 27, 2020
Micron Technology, Inc., Boise, ID (US);
Daniele Vimercati, El Dorado Hills, CA (US);
Duane R. Mills, Shingle Springs, CA (US);
Richard E. Fackenthal, Carmichael, CA (US);
Yasuko Hattori, Folsom, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for memory cell sensing stress mitigation are described. A memory device may be configured to bias a memory cell to a voltage with a first polarity or a second polarity (e.g., a positive voltage or a negative voltage) during an access operation to level wear experienced by the memory cell during the access operation. For example, during a first read operation, a first pulse with the first polarity (e.g., a negative voltage) may be applied to the memory cell to read out a first logic state stored at the memory cell. During a second read operation, a second pulse with the second polarity (e.g., a positive voltage) may be applied to the memory cell to read out a second logic state stored at the memory cell. The memory device may include a selection component for selecting between the different pulses used for different read operations.