Tokyo, Japan

Yasuji Yamada



Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 117(Granted Patents)


Location History:

  • Tokyo, JP (1992 - 1999)
  • Nagoya, JP (1998 - 1999)
  • Matsue, JP (2007)

Company Filing History:

goldMedal10 out of 128 
 
International Superconductivity Technology Center
 patents
silverMedal3 out of 32 
 
Kyushu Electric Power Co., Inc.
 patents
bronzeMedal3 out of 218 
 
Mitsubishi Cable Industries, Ltd.
 patents
43 out of 1,801 
 
Fujikura Limited
 patents
52 out of 10,239 
 
Sumitomo Electric Industries, Limited
 patents
62 out of 314 
 
Taisho Pharmaceutical Co., Ltd.
 patents
72 out of 836 
 
Hitachi Cable, Inc.
 patents
82 out of 19 
 
Hokkaido Electric Power Company, Inc.
 patents
92 out of 195 
 
The Kansai Electric Power Co., Inc.
 patents
101 out of 4,916 
 
Ngk Insulators, Inc.
 patents
111 out of 2,560 
 
Asahi Glass Company, Limited
 patents
121 out of 306 
 
Ishikawajima-harima Jukogyo Kabushiki Kaisha
 patents
131 out of 929 
 
Sumitomo Metal Industries, Inc.
 patents
141 out of 65 
 
Railway Technical Research Institute
 patents
151 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
161 out of 6,648 
 
Kyocera Corporation
 patents
171 out of 130 
 
Japan Energy Corporation
 patents
181 out of 28 
 
International Superconductivity Technology Center, the Juridical Foundation
 patents
where one patent can have more than one assignee

Years Active: 1992-2007

Loading Chart...
Loading Chart...
14 patents (USPTO):

Title: Yasuji Yamada: Innovator in Oxide Crystal Technology

Introduction

Yasuji Yamada is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of oxide crystal technology. With a total of 14 patents to his name, Yamada has made remarkable advancements that have implications in various technological applications.

Latest Patents

One of Yamada's latest patents is a method for preparing an oxide crystal film/substrate composite. This innovative process involves forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method. The method addresses critical issues such as cracking of the oxide crystal film, separation from the substrate, and the development of a reaction layer between the substrate and the solution. The solvent used for this process can be either a BaO–CuO–BaF system or a BaO–CuO–Ag–BaF system. Additionally, the temperature of the solution is controlled to not exceed 850°C during the growth of the oxide crystal film on the substrate.

Another notable patent involves a composite metal oxide material. This composite includes a substrate with an oriented film made of a Y123 metal oxide crystal, where the formula is LnBa₂Cu₃Oᵧ, with Ln representing Y or a lanthanoid element, and y being a number between 6 and 7. A layer of the same Y123 metal oxide is formed

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…