The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1996
Filed:
Sep. 12, 1994
Masaya Konishi, Tokyo, JP;
Kunihiko Hayashi, Tokyo, JP;
Youichi Enomoto, Tokyo, JP;
Shoji Tanaka, Tokyo, JP;
Yasuji Yamada, Tokyo, JP;
Kanshi Ohtsu, Tokyo, JP;
Yasuo Kanamori, Tokyo, JP;
Yuh Shiohara, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
International Superconductivity Technology Center, Tokyo, JP;
Abstract
The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.