The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
May. 15, 2002
Toshihiro Suga, Obu, JP;
Yasuji Yamada, Matsue, JP;
Toshihiko Maeda, Kawasaki, JP;
Seok Beom Kim, Okayama, JP;
Haruhiko Kurosaki, Nagoya, JP;
Yutaka Yamada, Nagoya, JP;
Izumi Hirabayashi, Tokyo, JP;
Yasuhiro Iijima, Tokyo, JP;
Tomonori Watanabe, Nagoya, JP;
Hisashi Yoshino, Tokyo, JP;
Koji Muranaka, Amagasaki, JP;
Toshihiro Suga, Obu, JP;
Yasuji Yamada, Matsue, JP;
Toshihiko Maeda, Kawasaki, JP;
Seok Beom Kim, Okayama, JP;
Haruhiko Kurosaki, Nagoya, JP;
Yutaka Yamada, Nagoya, JP;
Izumi Hirabayashi, Tokyo, JP;
Yasuhiro Iijima, Tokyo, JP;
Tomonori Watanabe, Nagoya, JP;
Hisashi Yoshino, Tokyo, JP;
Koji Muranaka, Amagasaki, JP;
International Superconductivity Technology Center, the Juridical Foundation, Tokyo, JP;
Fujikura Ltd., Tokyo, JP;
Abstract
There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaFsystem or a BaO—CuO—Ag—BaFsystem, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.