Yasuhiro Nishimori

Title: Yasuhiro Nishimori: Innovator in Plasma Processing Technology

Introduction

Yasuhiro Nishimori is a prominent inventor based in Ohme, Japan. He has made significant contributions to the field of plasma processing technology, holding three patents that showcase his innovative approaches to surface processing methods.

Latest Patents

Nishimori's latest patents include a surface processing method of a specimen and a surface processing apparatus of the specimen. One of his notable inventions is a plasma processing method for etching a sample that has a gate oxide film. This method generates plasma in a vacuum chamber using electromagnetic waves and applies an RF bias power to the sample. It involves turning off the RF bias power before the charged voltage of the sample reaches the breakdown voltage of the gate oxide film. After the charged voltage has substantially dropped, the RF bias power is turned back on, and this process is repeated to effectively process the sample. The off-time is set to be at least longer than the on-time, ensuring that plasma generation continues during the repeated cycles of turning the RF bias power on and off.

Career Highlights

Yasuhiro Nishimori is currently employed at Hitachi, Ltd., where he continues to develop and refine his innovative technologies. His work has significantly impacted the field of semiconductor manufacturing and surface processing.

Collaborations

Nishimori collaborates with esteemed colleagues such as Tetsuo Ono and Takashi Sato, contributing to advancements in their shared field of expertise.

Conclusion

Yasuhiro Nishimori's contributions to plasma processing technology highlight his role as a leading inventor in Japan. His innovative methods and collaborative efforts continue to influence the industry positively.