The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Jan. 12, 2004
Tetsuo Ono, Iruma, JP;
Yasuhiro Nishimori, Ohme, JP;
Takashi Sato, Kudamatsu, JP;
Naoyuki Kofuji, Tama, JP;
Masaru Izawa, Hino, JP;
Yasushi Goto, Kodaira, JP;
Ken Yoshioka, Hikari, JP;
Hideyuki Kazumi, Hitachi, JP;
Tatsumi Mizutani, Koganei, JP;
Tokuo Kure, Hinode-machi, JP;
Masayuki Kojima, Kokubunji, JP;
Takafumi Tokunaga, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Tetsuo Ono, Iruma, JP;
Yasuhiro Nishimori, Ohme, JP;
Takashi Sato, Kudamatsu, JP;
Naoyuki Kofuji, Tama, JP;
Masaru Izawa, Hino, JP;
Yasushi Goto, Kodaira, JP;
Ken Yoshioka, Hikari, JP;
Hideyuki Kazumi, Hitachi, JP;
Tatsumi Mizutani, Koganei, JP;
Tokuo Kure, Hinode-machi, JP;
Masayuki Kojima, Kokubunji, JP;
Takafumi Tokunaga, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.