The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
May. 01, 2002
Tetsuo Ono, Iruma, JP;
Yasuhiro Nishimori, Ohme, JP;
Takashi Sato, Kudamatsu, JP;
Naoyuki Kofuji, Tama, JP;
Masaru Izawa, Hino, JP;
Yasushi Goto, Kodaira, JP;
Ken Yoshioka, Hikari, JP;
Hideyuki Kazumi, Hitachi, JP;
Tatsumi Mizutani, Koganei, JP;
Tokuo Kure, Hinode-machi, JP;
Masayuki Kojima, Kokubunji, JP;
Takafumi Tokunaga, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.