The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Sep. 10, 1999
Tetsuo Ono, Iruma, JP;
Yasuhiro Nishimori, Ohme, JP;
Takashi Sato, Kudamatsu, JP;
Naoyuki Kofuji, Tama, JP;
Masaru Izawa, Hino, JP;
Yasushi Goto, Kodaira, JP;
Ken Yoshioka, Hikari, JP;
Hideyuki Kazumi, Hitachi, JP;
Tatsumi Mizutani, Koganei, JP;
Tokuo Kure, Hinode-machi, JP;
Masayuki Kojima, Kokubunji, JP;
Takafumi Tokunaga, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.