Sapporo, Japan

Yasuhiro Maeda


Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 1985-1992

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3 patents (USPTO):Explore Patents

Title: Yasuhiro Maeda: Innovator in Polycrystalline Silicon Technology

Introduction

Yasuhiro Maeda is a prominent inventor based in Sapporo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of polycrystalline silicon wafers. With a total of three patents to his name, Maeda's work has advanced the efficiency and effectiveness of silicon layer formation.

Latest Patents

Maeda's latest patents include a method of forming a polycrystalline silicon layer on a semiconductor wafer. This innovative method involves placing semiconductor wafers in recesses on a mold body, creating a mold, and utilizing centrifugal force to fill the air gap with melted silicon. The process allows for the formation of a 100-micron thick layer at high speed and low cost. Another notable patent is a method for fabricating a polycrystalline silicon wafer, which employs a turntable mechanism to radially flow molten silicon, resulting in large crystalline grains.

Career Highlights

Yasuhiro Maeda is currently associated with Hoxan Corporation, where he continues to develop cutting-edge technologies in semiconductor manufacturing. His expertise in polycrystalline silicon has positioned him as a key figure in the industry, contributing to advancements that enhance the performance of electronic devices.

Collaborations

Maeda has collaborated with notable colleagues such as Takashi Yokoyama and Shinichi Yagihashi. Their combined efforts have fostered innovation and progress in the field of semiconductor technology.

Conclusion

Yasuhiro Maeda's contributions to the development of polycrystalline silicon technology have made a significant impact on the semiconductor industry. His innovative methods and collaborative spirit continue to drive advancements in this critical field.

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