Hoxan Corporation

Yasuhiro Maeda

Takashi Yokoyama

Shinichi Yagihashi

Ichiro Hide

Keiji Sawaya

Takeyuki Matsuyama

A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.

Method of forming polycrystalline silicon layer on semiconductor wafer

A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.

Method for fabricating polycrystalline silicon wafer

A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.

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Sapporo, Japan

Yasuhiro Maeda