This inventor holds 1 USPTO granted patent. Top assignee: Renesas Technology Corp.. Active years: 2004.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2004
Title: Yasuhiro Hibi: Semiconductor Device Inventor
Introduction
Yasuhiro Hibi is an inventor associated with Hyogo, Japan, and Renesas Technology Corp. His recorded patent work concerns semiconductor-device structures for memory cells and peripheral transistor circuits.
Latest Patents
Hibi is credited with 1 patent, titled “Semiconductor device.” The invention describes a memory-cell pattern topped by a nitrogen-containing film, alongside a lower gate-electrode pattern in a peripheral circuit region topped by a thicker nitrogen-containing film. It also specifies different interlayer dielectric thicknesses between these patterns and a second conductive layer.
Career Highlights
The available information connects Hibi’s patent activity with Renesas Technology Corp. His patent focuses on the arrangement of semiconductor patterns and insulating layers within a device.
Collaborations
Satoshi Shimizu and Tsuyoshi Sugihara are identified as Hibi’s coworkers.
Conclusion
Yasuhiro Hibi’s recorded contribution is a semiconductor-device patent addressing the structure of memory-cell and peripheral-circuit regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile