This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020
Title: Yanxia Lin: Innovator in Non-Volatile Memory Technology
Introduction
Yanxia Lin is a prominent inventor based in Wuhan, China. She has made significant contributions to the field of non-volatile memory devices. Her innovative approach has led to the development of a unique programming method that enhances the efficiency of memory storage.
Latest Patents
Yanxia Lin holds 1 patent for her invention titled "Method for programming in non-volatile memory device by applying multiple bitline bias voltages." This patent describes a process that involves applying programming pulses to a non-volatile memory cell during two distinct programming loops. The method includes providing a bitline bias voltage based on comparisons of threshold voltages with target data states, which optimizes the programming process.
Career Highlights
Yanxia Lin is currently employed at Yangtze Memory Technologies Co., Ltd. Her work at this leading technology company has positioned her as a key player in the advancement of memory technology. She has demonstrated a strong commitment to innovation and excellence in her field.
Collaborations
Yanxia Lin collaborates with talented professionals such as Haibo Li and Chao Zhang. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.
Conclusion
Yanxia Lin's contributions to non-volatile memory technology exemplify her dedication to innovation. Her patent and work at Yangtze Memory Technologies Co., Ltd. highlight her role as a leading inventor in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile