Wuhan, China

Yanxia Lin


 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Yanxia Lin: Innovator in Non-Volatile Memory Technology

Introduction

Yanxia Lin is a prominent inventor based in Wuhan, China. She has made significant contributions to the field of non-volatile memory devices. Her innovative approach has led to the development of a unique programming method that enhances the efficiency of memory storage.

Latest Patents

Yanxia Lin holds 1 patent for her invention titled "Method for programming in non-volatile memory device by applying multiple bitline bias voltages." This patent describes a process that involves applying programming pulses to a non-volatile memory cell during two distinct programming loops. The method includes providing a bitline bias voltage based on comparisons of threshold voltages with target data states, which optimizes the programming process.

Career Highlights

Yanxia Lin is currently employed at Yangtze Memory Technologies Co., Ltd. Her work at this leading technology company has positioned her as a key player in the advancement of memory technology. She has demonstrated a strong commitment to innovation and excellence in her field.

Collaborations

Yanxia Lin collaborates with talented professionals such as Haibo Li and Chao Zhang. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Yanxia Lin's contributions to non-volatile memory technology exemplify her dedication to innovation. Her patent and work at Yangtze Memory Technologies Co., Ltd. highlight her role as a leading inventor in the industry.

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