Yanqing Wu

Title: Yanqing Wu: Innovator in InP-based Transistor Fabrication

Introduction

Yanqing Wu is a prominent inventor based in West Lafayette, IN (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of InP-based transistors. With a total of 3 patents to his name, Wu's work is paving the way for advancements in electronic devices.

Latest Patents

Wu's latest patents focus on methods of forming structures that include InP-based materials. These patents describe a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by atomic layer deposition (ALD) over a semiconductor layer that includes indium (In) and phosphorus (P). Additionally, a channel layer may be formed above a buffer layer that has a lattice constant similar to that of InP. This buffer layer is formed over a substrate with a different lattice constant than InP.

Career Highlights

Throughout his career, Yanqing Wu has worked with notable organizations, including Taiwan Semiconductor Manufacturing Company and Purdue Research Foundation. His experience in these institutions has allowed him to refine his expertise in semiconductor fabrication and innovation.

Collaborations

Wu has collaborated with esteemed colleagues in his field, including Peide Ye and Zhiyuan Cheng. Their combined efforts contribute to the ongoing research and development in semiconductor technologies.

Conclusion

Yanqing Wu's innovative work in InP-based transistor fabrication showcases his dedication to advancing semiconductor technology. His patents and collaborations highlight his significant impact on the industry.