Taiwan Semiconductor Manufacturing Comp. Ltd.

Purdue Research Foundation

Yanqing Wu

Zhiyuan Cheng

James Fiorenza

Bunmi T Adekore

Peide Ye

Yi Xuan

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device are disclosed. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

INP-based transistor fabrication

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

InP-based transistor fabrication

Growing community of inventors

West Lafayette, IN, United States of America

Yanqing Wu