Xi'an, China

Yanqiang Shi

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Yanqiang Shi: Innovator in Nuclear Battery Technology

Introduction

Yanqiang Shi is a prominent inventor based in Xi'an, China. He is known for his significant contributions to the field of nuclear battery technology. His innovative work has led to the development of advanced energy solutions that have the potential to impact various industries.

Latest Patents

Yanqiang Shi holds a patent for an "I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof." This invention features a layered structure that includes a radioisotope source layer, a p-type ohm contact electrode, a SiO passivation layer, a SiO compact insulation layer, a p-type SiC epitaxial layer, an n-type SiC epitaxial layer, an n-type SiC substrate, and an n-type ohm contact electrode. The doping density of the p-type SiC epitaxial layer is 1×10 to 5×10 cm, while the n-type SiC substrate has a doping density of 1×10 to 7×10 cm. The n-type SiC epitaxial layer is a low-doped layer formed by injecting vanadium ions, with a doping density of 1×10 to 5×10 cm. This invention addresses the issue of high doping density in existing SiC PIN-type nuclear batteries.

Career Highlights

Yanqiang Shi is affiliated with Xidian University, where he continues to advance his research and development efforts. His work has garnered attention for its innovative approach to energy solutions, particularly in the realm of nuclear batteries.

Collaborations

He has collaborated with notable colleagues, including Hui Guo and Keji Zhang, to further enhance the research and development of nuclear battery technologies.

Conclusion

Yanqiang Shi's contributions to the field of nuclear battery technology exemplify the innovative spirit of modern inventors. His work not only addresses existing challenges but also paves the way for future advancements in energy solutions.

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