Xidian University

Yanqiang Shi

Yuming Zhang

Hui Guo

Keji Zhang

Chao Han

Yujuan Zhang

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(), a p-type ohm contact electrode(), a SiOpassivation layer(), a SiOcompact insulation layer(), a p-type SiC epitaxial layer(), an n-type SiC epitaxial layer(), an n-type SiC substrate() and an n-type ohm contact electrode(). The doping density of the p-type SiC epitaxial layer() is 1&#xd7;10to 5&#xd7;10cm, the doping density of the n-type SiC substrate() is 1&#xd7;10to 7&#xd7;10cm. The n-type SiC epitaxial layer() is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1&#xd7;10to 5&#xd7;10cm. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

Growing community of inventors

Xi'an, China

Yanqiang Shi