The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
May. 31, 2012
Hui Guo, Xi'an, CN;
Keji Zhang, Xi'an, CN;
Yuming Zhang, Xi'an, CN;
Yujuan Zhang, Xi'an, CN;
Chao Han, Xi'an, CN;
Yanqiang Shi, Xi'an, CN;
Hui Guo, Xi'an, CN;
Keji Zhang, Xi'an, CN;
Yuming Zhang, Xi'an, CN;
Yujuan Zhang, Xi'an, CN;
Chao Han, Xi'an, CN;
Yanqiang Shi, Xi'an, CN;
XIDIAN UNIVERSITY, Xi'an, CN;
Abstract
A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(), a p-type ohm contact electrode(), a SiOpassivation layer(), a SiOcompact insulation layer(), a p-type SiC epitaxial layer(), an n-type SiC epitaxial layer(), an n-type SiC substrate() and an n-type ohm contact electrode(). The doping density of the p-type SiC epitaxial layer() is 1×10to 5×10cm, the doping density of the n-type SiC substrate() is 1×10to 7×10cm. The n-type SiC epitaxial layer() is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×10to 5×10cm. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.