Yujuan Zhang

Title: Yujuan Zhang: Innovator in Nuclear Battery Technology

Introduction

Yujuan Zhang is a prominent inventor based in Xi'an, China. She has made significant contributions to the field of nuclear battery technology. Her innovative work focuses on enhancing the efficiency and effectiveness of nuclear batteries through advanced materials and processes.

Latest Patents

Yujuan Zhang holds a patent for her invention titled "I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof." This invention features a layer I vanadium-doped PIN-type nuclear battery, which includes several components arranged from top to bottom: a radioisotope source layer, a p-type ohm contact electrode, a SiO passivation layer, a SiO compact insulation layer, a p-type SiC epitaxial layer, an n-type SiC epitaxial layer, an n-type SiC substrate, and an n-type ohm contact electrode. The doping density of the p-type SiC epitaxial layer is 1×10 to 5×10 cm, while the doping density of the n-type SiC substrate is 1×10 to 7×10 cm. The n-type SiC epitaxial layer is a low-doped layer I formed by injecting vanadium ions, with a doping density of 1×10 to 5×10 cm. This invention addresses the issue of high doping density in existing SiC PIN-type nuclear batteries.

Career Highlights

Yujuan Zhang is affiliated with Xidian University, where she continues to advance her research in nuclear battery technology. Her work has garnered attention for its potential applications in various fields, including energy storage and power generation.

Collaborations

Yujuan collaborates with notable colleagues, including Hui Guo and Keji Zhang, who contribute to her research endeavors and help drive innovation in the field.

Conclusion

Yujuan Zhang's contributions to nuclear battery technology exemplify her dedication to innovation and research. Her patented invention represents a significant advancement in the field, showcasing her expertise and commitment to developing efficient energy solutions.