Shanghai, China

Yaneng Min

This inventor holds 2 USPTO granted patents. Top assignees: Advanced Semiconductor Manufacturing Corporation Limited, Gta Semiconductor Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yaneng Min. Retrieved from https://idiyas.com/inventor/yaneng-min

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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2 patents (USPTO):Explore Patents

Title: Innovations of Yaneng Min in the Semiconductor Industry

Introduction: Yaneng Min is a distinguished inventor based in Shanghai, China, recognized for his significant contributions to the field of semiconductor technology. With a total of two patents to his name, Min's work focuses on advancing the performance and efficiency of insulated gate bipolar transistors (IGBTs), which are crucial components in modern electronic devices.

Latest Patents: Yaneng Min's latest innovations include two noteworthy patents. The first patent is titled "IGBT and Manufacturing Method Therefor." This invention involves a method where a target region in the IGBT is doped with first ions, enhancing its performance. The device features a gradual junction that improves breakdown voltage, shortens turn-off time, and enhances anti-latch capability. The second patent, "Insulated Gate Bipolar Transistor and Fabrication Method Therefor," details a new fabrication method for IGBTs. This method involves implanting hydrogen ions, arsenic ions, or nitrogen ions into the substrate from the back surface, creating an n-type heavily doped layer in the reverse conduction diode. This innovation accelerates the reverse recovery speed of the built-in reverse conduction diode, ultimately improving the overall performance of the insulated gate bipolar transistor.

Career Highlights: Throughout his career, Yaneng Min has worked with notable companies in the semiconductor industry, including Advanced Semiconductor Manufacturing Corporation Limited and GTA Semiconductor Co., Ltd. His roles at these reputable organizations have allowed him to apply his innovative ideas in practical applications, significantly impacting the field of semiconductor manufacturing.

Collaborations: Yaneng Min has collaborated with talented individuals such as Xueliang Wang and Jianhua Liu. These partnerships have facilitated the exchange of ideas and knowledge, leading to advancements in their research and development efforts in semiconductor technology.

Conclusion: Yaneng Min's contributions to the semiconductor industry through his patents demonstrate his commitment to innovation and excellence. His work on IGBTs has the potential to shape the future of electronic devices, improving their efficiency and performance. As technology continues to evolve, inventors like Min play a critical role in driving progress in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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