Advanced Semiconductor Manufacturing Corporation Limited

Gta Semiconductor Co., Ltd.

Yaneng Min

Jianhua Liu

Xueliang Wang

Jinrong Lang

An IGBT and a manufacturing method therefor, wherein a target region in the IGBT is doped with first ions; the target region comprises at least one of a P-type substrate (), a P-type well region (), and a P-type source region (); and the diffusion coefficient of the first ions is greater than the diffusion coefficients of boron ions. A PN junction formed by means of the present invention is a gradual junction, thereby improving breakdown voltage, shortening turn-off time, and improving anti-latch capability.

IGBT and manufacturing method therefor

An insulated gate bipolar transistor and a fabrication method therefor, wherein the fabrication method for the insulated gate bipolar transistor comprises the following steps: implanting hydrogen ions, arsenic ions, or nitrogen ions into a substrate from a back surface of the insulated gate bipolar transistor so as to form an n-type heavily doped layer () of a reverse conduction diode, the reverse conduction diode being a reverse conduction diode built into the insulated gate bipolar transistor. The described fabrication method and the obtained insulated gate bipolar transistor from a recombination center in an n+ junction of the reverse conduction diode, thereby accelerating the reverse recovery speed of the built-in reverse conduction diode, shortening the reverse recovery time thereof, and improving the performance of the insulated gate bipolar transistor.

Growing community of inventors

Shanghai, China

Yaneng Min