The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jun. 12, 2019
Applicant:
Gta Semiconductor Co., Ltd., Shanghai, CN;
Inventors:
Xueliang Wang, Shanghai, CN;
Jianhua Liu, Shanghai, CN;
Jinrong Lang, Shanghai, CN;
Yaneng Min, Shanghai, CN;
Assignee:
GTA Semiconductor Co., Ltd., Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 29/0611 (2013.01); H01L 29/1095 (2013.01); H01L 29/66325 (2013.01);
Abstract
An IGBT and a manufacturing method therefor, wherein a target region in the IGBT is doped with first ions; the target region comprises at least one of a P-type substrate (), a P-type well region (), and a P-type source region (); and the diffusion coefficient of the first ions is greater than the diffusion coefficients of boron ions. A PN junction formed by means of the present invention is a gradual junction, thereby improving breakdown voltage, shortening turn-off time, and improving anti-latch capability.