Yan-Hung Huang

Title: Innovations of Yan-Hung Huang

Introduction

Yan-Hung Huang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. With a total of two patents to his name, Huang's work has had a considerable impact on the industry.

Latest Patents

Huang's latest patents include a one-time programmable memory and a non-volatile memory. The one-time programmable memory features a substrate with multiple isolation structures, a first transistor, and a second transistor. This design allows for a unique active area defined by the isolation structures, enhancing the functionality of the memory device. The non-volatile memory patent describes a structure that includes a substrate, control gate, floating gate, and select gate, with a specific configuration that optimizes performance and reliability.

Career Highlights

Huang is currently employed at Powerchip Semiconductor Corporation, where he continues to innovate in the semiconductor field. His work has contributed to advancements in memory technology, making significant strides in the efficiency and effectiveness of memory devices.

Collaborations

Huang has collaborated with notable colleagues such as Ko-Hsing Chang and Tsung-Cheng Huang. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Yan-Hung Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced memory devices, showcasing the importance of innovation in technology.