The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Apr. 20, 2006
Ko-hsing Chang, Hsinchu, TW;
Tsung-cheng Huang, Hsinchu, TW;
Yan-hung Huang, Hsinchu County, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A non-volatile memory is provided, including a substrate, a control gate, a floating gate, and a select gate. A source region and a drain region are disposed in the substrate. The control gate is disposed on the substrate between the source region and the drain region. The floating gate is disposed between the control gate and the substrate. The cross-section of the floating gate presents, for example, an L-shape and the floating gate includes a central region which is perpendicular to the substrate and a lateral region which is parallel to the substrate. The central region is adjacent to the source region. The select gate is disposed on the sidewall of the control gate and the lateral region of the floating gate, and is adjacent to the drain region. Besides, the present invention further includes a method of manufacturing the above non-volatile memory.