Hsinchu, Taiwan

Ya-Wei Liao

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ya-Wei Liao. Retrieved from https://idiyas.com/inventor/ya-wei-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ya-Wei Liao and Semiconductor Device Innovation.

Introduction

Ya-Wei Liao is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Company Limited. The supplied information identifies 1 patent associated with Liao.

Latest Patents

Liao’s listed patent is “Semiconductor Device and Manufacturing Method Thereof.” It describes a semiconductor fabrication process that forms an epitaxial stack, shapes it into a fin, and uses sacrificial gate structures and sidewall spacers during device fabrication. The method includes pretreating and recessing sacrificial epitaxial layers, forming inner spacers and source/drain features, and replacing sacrificial structures with a metal gate. The inner spacers are designed to be thick enough to resist epitaxial damage.

Career Highlights

The available information connects Liao’s patent work with Taiwan Semiconductor Manufacturing Company Limited and semiconductor device manufacturing. The described invention focuses on fabrication techniques for semiconductor structures.

Collaborations

The supplied data lists Shu-Uei Jang and Chung-Shu Wu as Liao’s coworkers. It does not specify their roles in the patent or any particular collaboration.

Conclusion

Ya-Wei Liao’s listed patent addresses semiconductor fabrication, with a focus on inner spacers designed to help protect device structures from epitaxial damage.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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