The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 17, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor fabrication method includes: forming, on a substrate, an epitaxial stack comprising at least one sacrificial epitaxial layer and at least one channel epitaxial layer; forming a fin in the epitaxial stack; forming a sacrificial gate stack on channel regions of the fin; forming gate sidewall spacers on sidewalls of the sacrificial gate stack; performing pre-treatment operations to remove impurities from the at least one sacrificial epitaxial layer; recessing the at least one sacrificial epitaxial layer to form a cavity; forming inner spacer material in the cavity; forming source/drain features; removing the sacrificial gate stack and the at least one sacrificial epitaxial layer in the fins; and forming a metal gate to replace the sacrificial gate stack and the at least one sacrificial epitaxial layer, wherein the inner spacers have sufficient thickness to resist epi damage.