Xuezhen Jing

Title: Xuezhen Jing: Innovator in Semiconductor Technology

Introduction

Xuezhen Jing is a prominent inventor based in Shanghai, China, known for his significant contributions to the field of semiconductor technology. With a total of six patents to his name, Jing has made remarkable advancements in semiconductor devices and their fabrication methods.

Latest Patents

Among his latest patents is a semiconductor device and fabrication method that includes a substrate, a source-drain plug layer, a gate structure, and a dielectric layer. This innovative semiconductor device features a first through-hole and a second through-hole, which expose the top surfaces of the source-drain plug layer and the gate structure, respectively. Additionally, he has developed a method for forming a semiconductor device that involves providing a base, forming an interlayer dielectric layer, and creating contact holes through etching. This method ensures that the metal layer fully fills the contact holes, enhancing the device's performance.

Career Highlights

Xuezhen Jing has worked with notable companies in the semiconductor industry, including Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge semiconductor technologies.

Collaborations

Jing has collaborated with talented individuals in his field, including Tiantian Zhang and Hailong Yu. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Xuezhen Jing's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His patents and collaborations reflect his commitment to enhancing semiconductor devices, making him a notable figure in the industry.