Shanghai, China

Xuejie Shi

This inventor holds 4 USPTO granted patents and 1 EPO patent. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xuejie Shi. Retrieved from https://idiyas.com/inventor/xuejie-shi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018-2025

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4 patents (USPTO):Explore Patents

Title: Xuejie Shi: Innovator in Semiconductor Technology

Introduction

Xuejie Shi is a prominent inventor based in Shanghai, China, known for his significant contributions to semiconductor technology. With a total of four patents to his name, he has developed innovative methods that enhance the performance and reliability of semiconductor structures.

Latest Patents

Xuejie Shi's latest patents include a method for forming a semiconductor structure. This method involves providing a base, a dummy gate structure, a source-drain doped region, and an interlayer dielectric layer. The process includes removing the dummy gate structure located at an isolation region to form an isolation opening, performing first ion doping on a fin below the isolation opening, and filling an isolation structure in the isolation opening. This innovative approach improves the potential energy barrier of a P-N junction, preventing conduction current in the fin of the isolation region during device operation.

Another notable patent is a semiconductor structure and method for forming the same. This method also includes providing a base, a gate structure, a source-drain doping region, and an interlayer dielectric layer. The process involves removing the gate structure in an isolation region, performing first ion-doping on the fin under the isolation opening, and filling the isolation opening with an isolation structure. This method enhances the barrier of a P-N junction, ensuring effective isolation between fins in different regions.

Career Highlights

Xuejie Shi has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Xuejie Shi has collaborated with notable professionals in the field, including Dae-Sub Jung and Deyan Chen. These collaborations have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Xuejie Shi's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His patents reflect a deep understanding of semiconductor structures and their applications, making him a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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