The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

Jan. 03, 2017
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Dae-Sub Jung, Shanghai, CN;

Deyan Chen, Shanghai, CN;

Xuejie Shi, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1461 (2013.01); H01L 27/14612 (2013.01); H01L 27/14689 (2013.01);
Abstract

The present disclosure provides CMOS image sensors and fabrication methods thereof. An exemplary fabrication process of a CMOS image sensor includes providing a substrate having a first region and a second region connecting with the first region at a first end of the first region; forming a transfer transistor on surface of the substrate in the second region; forming a first implanting region in the substrate in the first region using a first mask; forming a second implanting region in the first implanting region by, the first implanting region being separated into a third implanting region on the second implanting region and a fourth implanting region under the second implanting region; forming a fifth region in the second region at the first end using a second mask, connecting the third implanting region with the fourth implanting region.


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