Xuan Huang

Title: Xuan Huang: Innovator in Semiconductor Technology

Introduction

Xuan Huang is a notable inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of insulated-gate bipolar transistors (IGBTs). With a total of 2 patents, his work has advanced the efficiency and effectiveness of semiconductor devices.

Latest Patents

Huang's latest patents include a method for manufacturing an injection-enhanced insulated-gate bipolar transistor. This innovative method involves several steps, including the formation of a p-type doped layer on an n-type substrate and the creation of a groove that extends to the substrate. The process allows for a shortened production cycle compared to conventional methods, as it requires only one drive-in process to form both the p-type base region and the n-type buffer layer. Another significant patent is a method for manufacturing an IGBT, which includes forming grooves on a substrate and filling them with semiconductor material. This method is compatible with conventional processes and boasts high efficiency.

Career Highlights

Xuan Huang has worked with CSMC Technologies, specifically at Fab2 and Fab1. His experience in these companies has allowed him to refine his skills and contribute to advancements in semiconductor manufacturing.

Collaborations

Huang has collaborated with notable coworkers, including Wanli Wang and Genyi Wang. Their combined expertise has fostered innovation in their projects.

Conclusion

Xuan Huang's contributions to semiconductor technology through his patents and career experiences highlight his role as an influential inventor in the field. His innovative methods for manufacturing IGBTs and injection-enhanced transistors are paving the way for future advancements in the industry.