Xiu-Li Yang

Title: The Innovative Contributions of Xiu-Li Yang in Memory Device Technology

Introduction: Xiu-Li Yang, an accomplished inventor based in Shanghai, China, has made significant contributions to the field of memory device technology. With a total of 23 patents to his name, Yang stands out for his innovative solutions and advancements in signal generation and timing control circuits within memory devices.

Latest Patents: Yang's latest patents showcase his expertise in designing cutting-edge technology. One notable patent is the "Signal Generator for Controlling Timing of Signal in Memory Device." This device features a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit, and a control signal generator. The design allows for precise timing control by generating control signals based on the lengths of the respective memory subarrays.

Another significant patent by Yang is the "Timing Control Circuit of Memory Device with Tracking Word Line and Tracking Bit Line." This invention comprises a memory array with tracking cells and a tracking bit line. The timing control circuit, which includes a Schmitt trigger, enhances the performance of the memory device by generating enabling and trigger signals based on the voltage levels in the memory array.

Career Highlights: Yang has demonstrated his abilities at prominent companies, including Taiwan Semiconductor Manufacturing Company Limited and TSMC China Company Limited. His work in these organizations has enabled him to refine his skills and contribute to the advancement of semiconductor technology and memory devices.

Collaborations: Throughout his career, Yang has collaborated with talented individuals such as He-Zhou Wan and Ching-Wei Wu. These collaborations have likely enriched his work and led to innovative breakthroughs in memory technology.

Conclusion: Xiu-Li Yang's contributions to the field of memory devices are noteworthy, with 23 patents reflecting his innovative spirit and technical expertise. His latest patents demonstrate a commitment to advancing technology, making significant strides in signal generation and timing control. As the industry continues to evolve, Yang's work will undoubtedly leave a lasting impact on the future of memory devices.