Singapore, Singapore

Xin Xu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovator Xin Xu: A Breakthrough in Memory Device Technology

Introduction: Xin Xu, a prominent inventor based in Singapore, has made significant contributions to the field of semiconductor technology. With a focus on improving memory devices, Xu has developed an innovative method that has garnered attention within the industry. His notable invention is a testament to the advancements being made in this critical area of technology.

Latest Patents: Xin Xu holds a patent for a "Memory device and method for fabricating the same." This patent describes a method for fabricating a memory device, encompassing several key steps: providing a substrate, forming a tunnel oxide layer on the substrate, fabricating a first gate layer on the tunnel oxide layer, creating a negative capacitance (NC) insulating layer on the first gate layer, and finally, forming a second gate layer on the NC insulating layer. Furthermore, the second gate layer preferably includes both a work function metal layer on the NC insulating layer and a low resistance metal layer on the work function metal layer, showcasing an intricate approach to enhancing memory device performance.

Career Highlights: Xu is currently employed by United Microelectronics Corporation, a leading semiconductor foundry that plays a crucial role in the global electronics supply chain. His work at the company emphasizes innovation and development within the semiconductor industry, reinforcing the importance of advanced memory technologies.

Collaborations: Throughout his career, Xin Xu has collaborated with esteemed colleagues, including Lanxiang Wang and Hong Liao. These partnerships highlight the collaborative nature of research and development in technology, where sharing expertise can lead to groundbreaking advancements.

Conclusion: Xin Xu's contributions to memory device technology illustrate the potential for innovation within the semiconductor industry. His patented methods not only strengthen the capabilities of memory devices but also reflect a broader trend of continuous improvement and development in technology. As advancements in this field progress, inventors like Xin Xu play an essential role in shaping the future of electronic devices.

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