Xin Shu Cai

Title: Innovations of Xin Shu Cai in Non-Volatile Memory Technology

Introduction

Xin Shu Cai is a notable inventor based in Singapore, recognized for his contributions to the field of non-volatile memory devices. With a focus on innovative technology, he has developed a patent that enhances the reliability and efficiency of memory storage solutions.

Latest Patents

Xin Shu Cai holds a patent for a "Reliable non-volatile memory device." This invention outlines a device and method for forming a memory device that includes a substrate prepared with a memory cell region featuring a pair of non-volatile memory cells with a split gate. The split gate consists of first and second gates, where the first gate serves as an access gate and the second gate functions as a storage gate with a control gate over a floating gate. The design incorporates a common second source/drain (S/D) region adjacent to the second gates of the memory cells, along with first S/D regions adjacent to the first gates. An erase gate is strategically placed over the common second S/D region, isolated by dielectric layers.

Career Highlights

Xin Shu Cai is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to advance his research and development in memory technology. His work has significantly contributed to the field, showcasing his expertise and innovative thinking.

Collaborations

Xin Shu Cai collaborates with talented colleagues, including Jin Qiu Liu and Fan Zhang, who contribute to the dynamic research environment at Globalfoundries Singapore Pte. Ltd.

Conclusion

Xin Shu Cai's innovative work in non-volatile memory technology exemplifies the importance of advancements in this field. His patent reflects a significant step forward in memory device reliability and efficiency.