Xiaoxiao Zhang

Title: Innovations of Xiaoxiao Zhang

Introduction

Xiaoxiao Zhang is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor device fabrication and integrated circuits. With a total of 2 patents, his work has advanced the technology used in multi-gate transistor devices.

Latest Patents

Xiaoxiao Zhang's latest patents include "Semiconductor devices with uniform gate height and method of forming same." This patent focuses on replacement metal gate processes and structures for multi-gate transistor devices that have both short and long channel components. Another significant patent is the "Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure." This patent describes a method for generating a device layout of an EBO OVL structure, simulating worst-case process margins, and enabling multiple devices for the generated layout.

Career Highlights

Throughout his career, Xiaoxiao Zhang has worked with prominent companies in the semiconductor industry, including GlobalFoundries U.S. Inc. and GlobalFoundries Inc. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Xiaoxiao has collaborated with talented individuals such as Yanping Shen and Shesh Mani Pandey, contributing to the advancement of their projects and innovations.

Conclusion

Xiaoxiao Zhang's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence the development of advanced semiconductor devices.