The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jun. 06, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Yanping Shen, Saratoga Springs, NY (US);
Xiaoxiao Zhang, Clifton Park, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
Hui Zang, Guilderland, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7855 (2013.01); H01L 21/28088 (2013.01); H01L 21/31111 (2013.01); H01L 29/1033 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
The present disclosure generally relates to semiconductor device fabrication and integrated circuits. More particularly, the present disclosure relates to replacement metal gate processes and structures for multi-gate transistor devices having a short channel and a long channel component.