Globalfoundries Inc.

Globalfoundries U.S. Inc.

Xiaoxiao Zhang

Hui Zang

Shesh Mani Pandey

Guoxiang Ning

Yanping Shen

Hongliang Shen

Dongsuk Park

Erfeng Ding

Lan Yang

The present disclosure generally relates to semiconductor device fabrication and integrated circuits. More particularly, the present disclosure relates to replacement metal gate processes and structures for multi-gate transistor devices having a short channel and a long channel component.

Semiconductor devices with uniform gate height and method of forming same

The present disclosure relates to a method which includes generating a device layout of an eBeam based overlay (EBO OVL) structure with a minimum design rule, simulating a worst case process margin for the generated device layout of the EBO OVL structure, enabling a plurality of devices for the simulated worst case process margin for the generated device layout of the EBO OVL structure, and breaking a plurality of design rules for the enabled plurality of devices of the EBO OVL structure to generate an OVL measurement layout of the EBO OVL structure.

Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure

Growing community of inventors

Clifton Park, NY, United States of America

Xiaoxiao Zhang