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For the Inventor, By the Inventor

Essex, VT, United States of America

Xiaowei Tian

USPTO Granted Patents = 11

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 74(Granted Patents)


Location History:

  • Essex, VT (US) (1999 - 2014)
  • Essex Junction, VT (US) (2000 - 2014)

Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1999-2014

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11 patents (USPTO):Explore Patents
1. 8921172 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-12-30),
2. 8779476 - Asymmetric wedge JFET, related method and design structure (2014-07-15),
3. 8754455 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-06-17),
4. 8481380 - Asymmetric wedge JFET, related method and design structure (2013-07-09),
5. 6838323 - Diffusion resistor/capacitor (DRC) non-aligned MOSFET structure (2005-01-04),
6. 6100153 - Reliable diffusion resistor and diffusion capacitor (2000-08-08),
7. 6097068 - Semiconductor device fabrication method and apparatus using connecting (2000-08-01),
8. 6057204 - Method of making a noise-isolated buried resistor by implanting a first (2000-05-02),
9. 6057184 - Semiconductor device fabrication method using connecting implants (2000-05-02),
10. 5972745 - Method or forming self-aligned halo-isolated wells (1999-10-26),
11. 5883566 - Noise-isolated buried resistor (1999-03-16),

Title: Innovations of Inventor Xiaowei Tian

Introduction

Xiaowei Tian is a prominent inventor based in Essex, Vermont, known for his significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, he has made remarkable advancements in junction field effect transistors (JFETs) and related structures. His work has been instrumental in enhancing the performance and efficiency of integrated circuits.

Latest Patents

Xiaowei Tian's latest patents include a junction field effect transistor structure featuring P-type silicon germanium or silicon germanium carbide gates. This innovative design allows for a lower pinch-off voltage without increasing the on-resistance, thereby improving the overall efficiency of the device. Another notable patent involves an asymmetric wedge JFET, which incorporates a unique design structure that enhances the performance of integrated circuit chips. These patents reflect his commitment to pushing the boundaries of semiconductor technology.

Career Highlights

Xiaowei Tian is currently employed at International Business Machines Corporation (IBM), where he continues to develop cutting-edge technologies. His work at IBM has positioned him as a key player in the semiconductor industry, contributing to various projects that aim to improve electronic devices' performance and reliability.

Collaborations

Throughout his career, Xiaowei has collaborated with esteemed colleagues such as Minh H Tong and Edward J Nowak. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas, further enhancing the impact of their collective work.

Conclusion

Xiaowei Tian's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His innovative designs and commitment to excellence continue to shape the future of integrated circuits and electronic devices.

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