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For the Inventor, By the Inventor

Kurita-gun, Japan

Xiao-min Li

This inventor holds 6 USPTO granted patents. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2000-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiao-min Li. Retrieved from https://idiyas.com/inventor/xiao-min-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6

% Patents Active = 66.7

Average Co-Inventor Count = 1.7

ph-index = 4

Forward Citations = 36(Granted Patents)


Location History:

  • Shiga-ken, JP (2000 - 2002)
  • Kurita-gun, JP (2003)

Company Filing History:

goldMedal6 out of 13,796 
 
Murata Manufacturing Co., Ltd.
 patents

Years Active: 2000-2003

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6 patents (USPTO):Explore Patents
1. 6667182 - Method for making ferroelectric thin-film, sensor and the ferroelectric thin-film element (2003-12-23),
2. 6613585 - Ferroelectric thin film device and method of producing the same (2003-09-02),
3. 6465825 - Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same (2002-10-15),
4. 6204525 - Ferroelectric thin film device and method of producing the same (2001-03-20),
5. 6198120 - Ferroelectric thin film device and method of producing the same (2001-03-06),
6. 6050217 - Parallel plate plasma CVD apparatus (2000-04-18),

Title: Innovations of Inventor Xiao-min Li

Introduction

Xiao-min Li is a notable inventor based in Kurita-gun, Japan. He has made significant contributions to the field of ferroelectric materials, holding a total of 6 patents. His work focuses on the development of advanced thin-film technologies that have applications in various electronic devices.

Latest Patents

Among his latest patents is a method for making ferroelectric thin-film sensors and elements. This invention describes a ferroelectric thin-film element that consists of a silicon substrate and a thin-film laminate formed on it. The laminate includes a buffer layer that is epitaxially grown on the silicon substrate, a metallic thin film lower electrode, and a ferroelectric thin film that is orientationally or epitaxially grown on the lower electrode. An upper electrode is formed on the ferroelectric thin film, and a portion of the thin-film laminate may be supported by air. Another significant patent is for a ferroelectric thin film device, which comprises a silicon substrate and a titanium nitride thin film. This thin film has its titanium component partially replaced with aluminum, and a ferroelectric thin film of an oxide with a perovskite structure is formed on it. The amount of aluminum atoms present at titanium sites of the titanium nitride thin film is carefully controlled, ensuring optimal performance.

Career Highlights

Xiao-min Li is currently employed at Murata Manufacturing Co., Ltd., where he continues to innovate in the field of ferroelectric materials. His work has been instrumental in advancing the technology used in various electronic applications.

Collaborations

He collaborates with talented coworkers, including Atsushi Sakurai and Kosuke Shiratsuyu, who contribute to his research and development efforts.

Conclusion

Xiao-min Li's contributions to the field of ferroelectric materials and thin-film technologies are noteworthy. His innovative patents and ongoing work at Murata Manufacturing Co., Ltd. highlight his role as a leading inventor in this specialized area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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