The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Mar. 12, 2001
Applicant:
Inventors:
Xiao-min Li, Kurita-gun, JP;
Katsuhiko Tanaka, Ibaraki, JP;
Assignee:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/166 ;
Abstract
A ferroelectric thin-film element has a Si substrate and a thin-film laminate formed on the Si substrate, the thin-film laminate being a buffer layer epitaxially grown on the Si substrate, a metallic thin film lower electrode epitaxially grown on the buffer layer, a ferroelectric thin film orientationally grown or epitaxially grown on the lower electrode, and an upper electrode formed on the ferroelectric thin film. A portion of the thin-film laminate may be supported by air.