Murata Manufacturing Co., Ltd.

Xiao-min Li

Atsushi Sakurai

Kosuke Shiratsuyu

Katsuhiko Tanaka

A ferroelectric thin-film element has a Si substrate and a thin-film laminate formed on the Si substrate, the thin-film laminate being a buffer layer epitaxially grown on the Si substrate, a metallic thin film lower electrode epitaxially grown on the buffer layer, a ferroelectric thin film orientationally grown or epitaxially grown on the lower electrode, and an upper electrode formed on the ferroelectric thin film. A portion of the thin-film laminate may be supported by air.

Method for making ferroelectric thin-film, sensor and the ferroelectric thin-film element

A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.

Ferroelectric thin film device and method of producing the same

A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh epitaxially grown on said MgO buffer layer.

Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same

A ferroelectric thin film device comprises: a Si substrate; a TiN thin film epitaxially grown on the Si substrate in which Ti is partially substituted by Al; a metal thin film epitaxially grown on the TiN thin film; and a ferroelectric thin film grown and oriented on the metal thin film and composed of an oxide having a perovskite structure. The amount of Al substituted at Ti sites in the TiN thin film is about 1 to 30% in terms of Al atoms, and the oxygen content of the TiN thin film is about 5% or less in terms of oxygen atoms.

A parallel plate plasma CVD apparatus comprises a radio-frequency generator; a reaction chamber; a bottom electrode provided in the reaction chamber and grounded; a top electrode provided opposite to the bottom electrode in the reaction chamber and connected to the radio-frequency generator; a mesh electrode provided between the bottom electrode and the top electrode in the reaction chamber; and one of a resistor and a capacitor electrically connected between the bottom electrode and the mesh electrode.

Growing community of inventors

Kurita-gun, Japan

Xiao-min Li