Hefei, China

Xianguo Zhou

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xianguo Zhou. Retrieved from https://idiyas.com/inventor/xianguo-zhou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Xianguo Zhou: Innovator in Semiconductor Technology

Introduction

Xianguo Zhou is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique preparation method for semiconductor structures.

Latest Patents

Xianguo Zhou holds a patent titled "Preparation method for semiconductor structure and same." This patent outlines a comprehensive method for creating semiconductor structures. The process involves several steps, including providing a substrate, etching target layer, and forming various mask layers. The method emphasizes the importance of high etching selectivity ratios between materials used in the spacers and filling layers.

Career Highlights

Xianguo Zhou is currently employed at Changxin Memory Technologies, Inc. His role at the company allows him to apply his expertise in semiconductor technology. His work has been instrumental in advancing the company's research and development efforts.

Collaborations

Xianguo Zhou has collaborated with notable colleagues, including Longyang Chen and Shijie Bai. These collaborations have fostered a productive environment for innovation and technological advancement.

Conclusion

Xianguo Zhou's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Changxin Memory Technologies, Inc. highlight his commitment to advancing the field. His collaborations further enhance the impact of his work in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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